
Silicon Junction FETs (Small Signal)
1
Publication date: March 2004
SJF00013CED
2SK1842
Silicon N-channel junction FET
For impedance conversion in low frequency
For infrared sensor
■ Features
Low gate-source cutoff current I
GSS
Low capacitance (Common source) C
iss , Coss , Crss
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings T
a
= 25°C
1: Source
2: Drain
3: Gate
EIAJ: SC-59
Mini3-G1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Gate-drain voltage (Source open)
VGDO
40
V
Gate-source voltage (Drain open)
VGSO
40
V
Drain current
ID
1mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG
= 10 A, V
DS
= 0
40
V
Drain-source cutoff current *
IDSS
VDS
= 10 V, V
GS
= 0
30
200
A
Gate-source cutoff current
IGSS
VGS = 20 V, VDS = 0
0.5
A
Gate-source cutoff voltage
VGSC
VDS
= 10 V, I
D
= 1 A
1.3
3.0
V
Forward transfer admittance
Y
fs
VDS
= 10 V, V
GS
= 0, f = 1 kHz
0.05
mS
Short-circuit forward transfer capacitance
Ciss
VDS
= 10 V, V
GS
= 0, f = 1 MHz
1.0
pF
(Common source)
Short-circuit output capacitanc
Coss
0.4
pF
(Common source)
Reverse transfer capacitance
Crss
0.4
pF
(Common source)
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
S
IDSS (A)
30 to 75
50 to 100
70 to 130
100 to 200
Marking Symbol: EB
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en