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參數(shù)資料
| 型號： | 2SK1930(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 846K |
| 代理商： | 2SK1930(2-10S1B) |
2SK1930
2006-11-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSII.5)
2SK1930
Chopper Regulator, DCDC Converter, and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 3.0 (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
1000
V
Draingate voltage (RGS = 20 k)
VDGR
1000
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
4
Drain current
Pulse (Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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