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參數資料
型號: 2SK198
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: For Low-Frequency Amplification
中文描述: 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數: 1/3頁
文件大小: 49K
代理商: 2SK198
1
Publication date: January 2002
SJF00006BED
Silicon Junction FETs (Small Signal)
2SK0198
(2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
I
Features
G
High mutual conductance g
m
G
Low noise type
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
I
Absolute Maximum Ratings
(T
a
=
25
°
C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
30
20
10
150
150
55 to
+
150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(T
a
=
25
°
C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
=
10 V, V
GS
=
0
V
GS
=
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 V, I
D
=
0.5 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
30 V, I
D
=
1 mA, G
V
=
80 dB
R
g
=
100 k
, Function
=
FLAT
min
0.5
0.1
4
max
12
100
1.5
Unit
mA
nA
V
mS
pF
pF
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
typ
13
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
1
+
Unit: mm
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