
Silicon Junction FETs (Small Signal)
1
Publication date: May 200
8
SJF00006DED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK0198 (2SK198)
Silicon N-channel junction FET
For low-frequency amplification
■ Features
High mutual conductance g
m
Low-noise characteristics
Mini type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Drain-sourse voltage
VDS
30
V
Drain-gate voltage (Source open)
VDGO
30
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source current *
IDSS
VDS
= 10 V, V
GS
= 0
0.5
12
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 0
100
nA
Gate-source cutoff voltage
VGSC
VDS = 10 V, ID = 10 A
0.1
1.5
V
Forward transfer admittance
Y
fs
VDS
= 10 V, I
D
= 0.5 mA, f = 1 kHz
4
mS
VDS = 10 V, VGS = 0, f = 1 kHz
4
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
14
pF
(Common source)
Reverse transfer capacitance
Crss
3.5
pF
(Common source)
Noise voltage
NV
VDS = 30 V, ID = 1 mA, GV = 80 dB
60
mV
Rg
= 100 k, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
0.5 to 3.0
2.0 to 6.0
4.0 to 12.0
Note) The part number in the parenthesis shows conventional part number.
■ Package
Code
Mini3-G1
Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 1O
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en