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參數(shù)資料
型號： 2SK2072-01S
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： Direct mounting on the PCB, Crimping connection, Discrete wire connectors; HRS No: 544-0004-7 00; No. of Positions: 3; Connector Type: Wire; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: Plug; Crimping; Direct PCB mounting; Single row
中文描述： 6 A, 800 V, 2.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TPACK-3
文件頁數(shù)： 1/2頁
文件大小： 208K
代理商： 2SK2072-01S
2SK2072-01L,S
FAP-IIA Series
N-channel MOS-FET
2,1
800V
6A
80W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Avalanche Proof
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
800
800
6
24
±30
80
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=800V
V
GS
=0V
V
GS
=±30V
I
D
=3A
I
D
=3A
V
DS
=25V
Min.
800
2,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
μC
V
GS
=0V
3,0
10
0,2
10
1,7
6,5
1200
120
40
25
25
85
45
3,5
500
1,0
100
2,1
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
I
DR
I
DRM
V
SD
t
rr
Q
rr
3
1800
180
60
40
40
130
70
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=5A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
6
6
24
1,6
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
1,1
400
1,5
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
125
1,56
Unit
°C/W
°C/W
Collmer Semconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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