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參數(shù)資料
| 型號： | 2SK210-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | 2-3F1C, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 188K |
| 代理商： | 2SK210-Y |
2SK210
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
High power gain: GPS = 24dB (typ.) (f = 100 MHz)
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDO
-18
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = -1.0 V, VDS = 0 V
-10
nA
Gate-drain breakdown voltage
V (BR) GDO
IG = -100 mA
-18
V
Drain current
IDSS
(Note)
VGS = 0 V, VDS = 10 V
3
24
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 1 mA
-1.2
-3
V
Forward transfer admittance
Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
7
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
3.5
pF
Reverse transfer capacitance
Crss
VGD = -10 V, f = 1 MHz
0.65
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure 1)
24
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure 1)
1.8
3.5
dB
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
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