- 您現在的位置：買賣IC網 > PDF目錄371543 > 2SK2129 (PANASONIC CORP) Silicon N-Channel Power F-MOS FET PDF資料下載
參數資料
| 型號： | 2SK2129 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E |
| 封裝： | TO-220E, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 43K |
| 代理商： | 2SK2129 |
1
Power F-MOS FETs
2SK2129
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed: EAS > 20mJ
G
V
GSS
= ±30V guaranteed
G
High-speed switching: t
f
= 50ns
G
No secondary breakdown
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
1: Gate
2: Drain
3: Source
TO-220E Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100
min
800
2
1.5
typ
3.2
2.4
730
90
40
35
60
50
160
max
0.1
±1
5
4
1.6
2.5
Unit
mA
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
±30
±3
±6
20
50
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 4.5mH, I
L
= 3A, V
DD
= 50V, 1 pulse
9.9±0.3
2
3
1
4.6±0.2
2.9±0.2
2.6±0.1
2.54±0.2
5.08±0.4
0.75±0.1
1.2±0.15
1.45±0.15
1
1
+
–
φ
3.2±0.1
3
8
4
S
0.7±0.1
7
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK212 | N-Channel Junction Silicon FET(FM Tuner Applications) |
| 2SK2130 | Silicon N-Channel Power F-MOS FET |
| 2SK2145 | N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2147-01R | N-CHANNEL SILICON POWER MOS-FET |
| 2SK2148-01R | LED Mount; Bulb Size:T-1; LED Color:High Efficiency Red; Luminous Intensity:30mcd; Viewing Angle:45 ; Forward Current:30mA; Forward Voltage:2V; Operating Temperature Range:-40 C to +85 C; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK212C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600NA I(DSS) | SPAK |
| 2SK212D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SPAK |
| 2SK212E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK |
| 2SK212F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK213 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 140V 0.5A 3PIN TO-220AB - Rail/Tube |
發布緊急采購，3分鐘左右您將得到回復。