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參數資料
型號: 2SK2145-BL
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: 2-3L1C, SMV, 5 PIN
文件頁數: 1/5頁
文件大小: 301K
代理商: 2SK2145-BL
2SK2145
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
Audio Frequency Low Noise Amplifier Applications
Including two devices in SM5 (super mini type with 5 leads.)
High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 k
High input impedance: IGSS = 1 nA (max) at VGS = 30 V
Marking
Pin Assignment (top view)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
(Note 1)
300
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3L1C
Weight: 0.016 g (typ.)
相關PDF資料
PDF描述
2SK2152 2 A, 20 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關代理商/技術參數
參數描述
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