- 您現在的位置：買賣IC網 > PDF目錄55796 > 2SK2158A-T1B-AT 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數資料
| 型號： | 2SK2158A-T1B-AT |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, MINI MOLD, SC-59, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 126K |
| 代理商： | 2SK2158A-T1B-AT |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK2158A
N-CHANNEL MOSFET
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D17878EJ1V0DS00 (1st edition)
Date Published February 2006 NS CP(K)
Printed in Japan
1996
The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can
be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in low-
voltage portable systems such as headphone stereo sets and camcorders.
FEATURES
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to consider
driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2158A-T1B-AT
2SK2158A-T2B-AT
SC-59 (Mini Mold)
Marking: G23
Remark “-AT” indicates Pb-free (This product does not contain
Pb in external electrode and other parts.). “-T1B”, “-
T2B” indicates the unit orientation (8 mm embossed
carrier tape, 3,000 pcs/reel).
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (pulse)
Note
ID(pulse)
±0.2
A
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit: mm)
1: Source
2: Gate
3: Drain
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2158A-T2B-AT | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2159-T1-AZ | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2159 | 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2175 | 15 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2175 | 15 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2158M | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2158-T1B | 制造商:NEC Electronics Corporation 功能描述:100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2158T1BA | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
| 2SK2158-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,50V,0.1A,32ohm,MINI MOLD 制造商:Renesas 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
| 2SK2159 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
發布緊急采購，3分鐘左右您將得到回復。