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參數資料
| 型號： | 2SK2171 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for High-Frequency, Low-Frequency Amplifier Analog Switch Applications(應用于高頻，低頻放大器模擬開關的N溝道結型場效應管) |
| 中文描述： | N溝道場效應晶體管的結硅高頻，低頻放大器模擬開關應用（應用于高頻，低頻放大器模擬開關的?溝道結型場效應管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 154K |
| 代理商： | 2SK2171 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK2171
High-Frequency, Low-Frequency Amplifier
Analog Switch Applications
Ordering number:ENN4871
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71599TH (KT)/32295TS (KOTO) BX-0033 No.4871–1/5
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2125
[2SK2171]
Features
· Adoption of FBET process.
· Large | y
fs
|.
· Small Ciss.
· High P
D
allowable power dissipation.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : PCP
(Bottom View)
** : Pulse Test Pulse Width
≤
2mS
* : The 2SK2171 is classified by I
DSS
as follows : (unit : mA)
Marking : KM
I
DSS
rank : 3, 4, 5
Continued on next page.
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