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參數資料
| 型號： | 2SK2211 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | 2SK2211 |
Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
1
For switching
I
Features
Low ON-resistance R
DS(ON)
High-speed switching
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
1: Gate
2: Drain
3: Source
Mini-Power Type Package (3-pin)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain to Source cut-off current
I
DSS
I
GSS
V
DSS
V
GSS
V
th
R
DS(ON)1
R
DS(ON)2
Yfs
V
DS
=
25 V, V
GS
=
0
V
GS
=
±
15 V, V
DS
=
0
I
D
=
0.1 mA, V
GS
=
0
I
GS
=
0.1 mA, V
DS
=
0
V
DS
=
5 V, I
D
=
1 mA
V
GS
=
4 V, I
D
=
0.5 A
V
GS
=
10 V, I
D
=
0.5 A
V
DS
=
10 V, I
D
=
0.5 A
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
10
μ
A
μ
A
Gate to Source leakage current
±
10
Drain to Source breakdown voltage
30
V
Gate to Source voltage
±
20
V
Gate threshold voltage
0.8
2
V
Drain to Source ON-resistance
*
0.48
0.75
0.35
0.6
Forward transfer admittance
0.5
S
Input capacitance (Common Source)
C
iss
C
oss
C
rss
t
ON
t
f
t
OFF
87
pF
Output capacitance (Common Source)
69
pF
Reverse transfer capacitance (Common Source)
23
pF
Turn-on time
V
GS
=
10 V, I
D
=
0.5 A, V
DD
=
10 V
R
L
=
10
12
ns
Fall time
160
ns
Turn-off time (delay time)
60
ns
I
Electrical Characteristics
T
a
=
25
°
C
Unit : mm
Marking Symbol: 2M
Note) *: Pulse measurement
Parameter
Symbol
Ratings
Unit
Drain to Source voltage
V
DS
V
GSO
I
D
I
PD
P
D
P
ch
T
stg
30
V
Gate to Source voltage
±
20
±
1
±
2
V
Drain current
A
Max drain current
A
Allowable power dissipation
*
1
W
Channel temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note)
* PC board: Copper foil of the drain portion should have a area of
1 cm
2
or more and the board thickness should be 1.7 mm.
4.5
±0.1
2
±
2
±
0
1
+
–
4
+
–
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
marking
3
2
1
Internal Connection
D
S
G
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相關代理商/技術參數 |
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| 2SK221100L | 功能描述:MOSFET N-CH 30V 1A MINI-PWR RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2212 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2212-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2213-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2213-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
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