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參數(shù)資料
| 型號(hào)： | 2SK2218 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for High-Frequency Low-Noise Amplifier Applications(高頻低噪聲放大器應(yīng)用的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)晶體管的結(jié)硅高頻低噪聲放大器的應(yīng)用（高頻低噪聲放大器應(yīng)用的?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | 2SK2218 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK2218
High-Frequency Low-Noise Amplifier
Applications
Ordering number:ENN5202
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90195YK (KOTO) BX-0347 No.5202–1/6
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2125
[2SK2218]
Features
· Adoption of FBET process.
· Amateur radio equipment.
· UHF amplifiers, MIX, OSC, analog switches.
· Large | y
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· Small Ciss.
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C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : PCP
(Bottom View)
** : Pulse Test Pulse Width
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* : The 2SK2218 is classified by I
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK222 | N-Channel Junction Silicon FET for Low-Frequency Low-Noise Amplifier Applications(低頻低噪聲放大器應(yīng)用的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2SK225 | SILICON N-CHANNEL ENHANCEMENT MOSFET |
| 2SK226 | SILICON N-CHANNEL ENHANCEMENT MOSFET |
| 2SK227 | SILICON N-CHANNEL ENHANCEMENT MOSFET |
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|---|---|
| 2SK2218-3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR|JFET|N-CHANNEL|40MA I(DSS)|SOT-89 |
| 2SK2218-4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR|JFET|N-CHANNEL|48MA I(DSS)|SOT-89 |
| 2SK2218-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR|JFET|N-CHANNEL|57MA I(DSS)|SOT-89 |
| 2SK2219 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Capacitor Microphone Applications |
| 2SK221H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
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