
1
Power F-MOS FETs
unit: mm
2SK2327
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
s Electrical Characteristics (T
C = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Conditions
VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 25V, ID = 5A
IDR = 10A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 200V, ID = 5A
VGS = 10V, RL = 40
min
600
2
3.6
typ
0.6
6
2000
210
70
30
40
60
195
max
100
±1
5
0.75
1.7
1.25
41.67
Unit
A
V
S
V
pF
ns
°C/W
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
600
±30
±10
±20
100
3
150
55 to +150
Unit
V
A
mJ
W
°C
*
L = 2mH, IL = 10A, 1 pulse
15.5±0.5
26.5±0.5
22.0±0.5
23.4
18.6±0.5
3.3±0.3
5.5±0.3
2.0
0.7±0.1
2.0
1.2
10.0
3.0±0.3
φ3.2±0.1
4.5
5.45±0.3
123
5.45±0.3
1.1±0.1
2.0±0.2
4.0
5
0.7±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html