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參數資料
| 型號： | 2SK2349 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Voltage, High-Speed Switching Applications |
| 中文描述： | 高壓，高速開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 54K |
| 代理商： | 2SK2349 |
2SK2349
Ordering number : EN5315A
High-Voltage, High-Speed
Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5315-1/4
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2349]
SANYO: TO-3JML
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
Ratings
Unit
V
V
A
A
W
W
°C
°C
1500
±30
10
20
4.6
160
150
PW
≤
10μs, duty cycle
≤
1%
Tc=25°C
Channel Temperature
Storage temperature
Tch
Tstg
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
1500
max
Unit
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current IDSS
Gate-to Source Leak Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
ID=1mA, VGS=0
VDS=1500V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=5A
ID=5A, VGS=10V
V
1.0
mA
nA
V
S
IGSS
VGS(off)
|yfs|
RDS(on)
±100
3.5
1.5
2.0
4.0
1.5
2.5
Ciss
Coss
Crss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
2900
400
200
pF
pF
pF
Continued on next page.
Features
Low ON resistance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
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