- 您現在的位置：買賣IC網 > PDF目錄55797 > 2SK2350 8.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK2350 |
| 元件分類： | JFETs |
| 英文描述： | 8.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 419K |
| 代理商： | 2SK2350 |
2SK2350
2009-12-10
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2350
Switching Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.26 (typ.)
High forward transfer admittance
: |Yfs| = 8 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 200 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Draingate voltage (RGS = 20 k)
VDGR
200
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
8.5
A
Drain current
Pulse (Note 1)
IDP
34
A
Drain power dissipation (Tc = 25°C)
PD
30
W
Single pulse avalanche energy
(Note 2)
EAS
110
mJ
Avalanche current
IAR
8.5
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
4.16
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 2.47 mH, RG = 25 , IAR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2359 | 7 A, 450 V, 0.0009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2360 | 7 A, 500 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2368-A | 15 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2368 | 15 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2371 | 25 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2350(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 200V 8.5A 3-Pin(3+Tab) TO-220NIS |
| 2SK2350_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2350_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC−DC Converter and Motor Drive |
| 2SK2352 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | SOT-186 |
| 2SK2353 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
發布緊急采購，3分鐘左右您將得到回復。