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參數資料
| 型號： | 2SK2378 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 26K |
| 代理商： | 2SK2378 |
2SK2378
No.5412-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitaing mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
200
±
20
13
52
2.0
30
150
PW
≤
10
μ
s, duty cycle
≤
1%
Allowable Power Dissipation
PD
Tc=25
°
C
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
°
C
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
200
±
20
max
Unit
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
IG=
±
100
μ
A, VDS=0
VDS=200V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=7A
V
V
μ
A
μ
A
V
S
100
±
10
2.5
1.5
5
8.5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5412B
2SK2378
Package Dimensions
unit : mm
2063A
[2SK2378]
O1000 TS IM TA-0174
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1
2
3
Ultrahigh-Speed Switching Applications
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|---|---|
| 2SK2390 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2406 | Ultrahigh-Speed Switching, Motor Driver Applications |
| 2SK2408 | Silicon N-Channel MOS FET |
| 2SK2409 | Switching N-channel power MOS FET industrial use |
| 2SK2410 | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2379 | 制造商:SANYO 功能描述:MOSFET, N CH, 200V, 20A, TO-220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A TO-220ML 制造商:Sanyo 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220ML |
| 2SK2380 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK23800QL | 功能描述:JFET LOW FREQ.IMPEDANCE CONVRT RoHS:否 類別:分離式半導體產品 >> JFET（結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK2381 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2381(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220NIS |
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