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參數(shù)資料
| 型號(hào)： | 2SK2395 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for Low-Noise HF Amplifier Applications(低噪聲 HF放大器應(yīng)用的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道結(jié)硅場效應(yīng)管，高頻低噪聲放大器的應(yīng)用（低噪聲高頻放大器應(yīng)用的?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 96K |
| 代理商： | 2SK2395 |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
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or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 1999. Specifications and information herein are subject to
change without notice.
2SK2395
PS No.4840–3/3
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| 2SK2418S | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2419 | MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2SK2395F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
| 2SK2395G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
| 2SK2395H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
| 2SK2397-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2398 | 功能描述:MOSFET N-CH 60V 45A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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