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參數資料
| 型號： | 2SK2398 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 436K |
| 代理商： | 2SK2398 |
2SK2398
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2398
DCDC Converter and Motor Drive Applications
Low drainsource ON resistance
: RDS (ON) = 22 m (typ.)
High forward transfer admittance
: |Yfs| = 27 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
45
A
Drain current
Pulse (Note 1)
IDP
180
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
246
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 H, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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| 2SK2398_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications |
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| 2SK2399(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 5A PW-MOLD |
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