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參數資料
| 型號： | 2SK2399 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-7J1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 421K |
| 代理商： | 2SK2399 |
2SK2399
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2
πMOSV)
2SK2399
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance
: RDS (ON) = 0.17 (typ.)
High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2399(Q) | 功能描述:MOSFET N-Ch 100V 5A 0.17 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2399(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 5A PW-MOLD |
| 2SK2399_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications |
| 2SK2399_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC/DC Converter and Motor Drive Applications |
| 2SK240 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 2.6MA I(DSS) |
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