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參數資料
| 型號： | 2SK241-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-4E1D, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 205K |
| 代理商： | 2SK241-O |
2SK241
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK241
FM Tuner, VHF and RF Amplifier Applications
Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: GPS = 28dB (typ.)
Recommend operation voltage: 5~15 V
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±5 V
±50
nA
Drain-source voltage
VDSX
VGS = -4 V, ID = 100 mA
20
V
Drain current
IDSS
VDS = 10 V, VGS = 0
(Note)
1.5
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 100 mA
-2.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
10
mS
Input capacitance
Ciss
3.0
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
0.035
0.050
pF
Power gain
Gps
28
dB
Noise figure
NF
VDS = 10 V, VGS = 0,
f
= 100 MHz (Figure 1)
1.7
3.0
dB
Note: IDSS classification O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK241Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-92VAR |
| 2SK241-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans RF MOSFET N-CH 20V 0.03A 3-Pin 2-4E1D |
| 2SK242 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency, General-Purpose Amp Applications |
| 2SK2420 | 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 60V TO-220F |
| 2SK2420_05 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:MOSFET |
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