- 您現在的位置：買賣IC網 > PDF目錄370108 > 2SK2414 (NEC Corp.) Switching N-channel power MOS FET industrial use PDF資料下載
參數資料
| 型號： | 2SK2414 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 58K |
| 代理商： | 2SK2414 |
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 70 m
MAX. (@ V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 95 m
MAX. (@ V
GS
= 4 V, I
D
= 5.0 A)
Low C
iss
C
iss
= 840 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±
20
±
10
±
40
20
1.0
150
V
V
A
A
W
W
°
C
°
C
A
mJ
–55 to +150
10
10
*
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
→
0
PW
≤
10
μ
s, Duty Cycle
≤
1 %
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
MP-3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
0.6 ±0.1
1.3
MAX.
1
1
2 3
5
7
M
1
M
2.32.3
0
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
1
4
M
0
1.3
MAX.
2.3 2.3
1 2
3
4
5
1
1
+
–
1
+
–
0.9
MAX.
0.8
MAX.
0.8
0
1
M
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2414-Z | Switching N-channel power MOS FET industrial use |
| 2SK2415 | Switching N-channel power MOS FET industrial use |
| 2SK2415-Z | Switching N-channel power MOS FET industrial use |
| 2SK2421 | MOSFET |
| 2SK2422 | Silicon N-Channel MOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2414-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V TO251 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V TO251 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 |
| 2SK2414-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2414-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 |
| 2SK2414-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2415 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
發布緊急采購，3分鐘左右您將得到回復。