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參數資料
| 型號： | 2SK2467-Y |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16F1B, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK2467-Y |
2SK2467
2006-11-21
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
High-Power Amplifier Application
High breakdown voltage: VDSS = 180 V
High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
180
V
Gate-source voltage
VGSS
±20
V
Drain current
(Note 1)
ID
9
A
Drain power dissipation (Tc = 25°C)
PD
80
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut-off current
IDSS
VDS = 180 V, VGS = 0
―
1.0
mA
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
―
±0.5
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
―
V
Drain-source saturation voltage
VDS (ON)
VGS = 10 V, ID = 6 A
―
2.5
5.0
V
Gate-source cut-off voltage
(Note 3)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
1.4
―
2.8
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
―
4.0
―
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
―
700
―
pF
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
―
150
―
pF
Reverse capacitance
Crss
VDS = 30 V, VGS = 0, f = 1 MHz
―
90
―
pF
Note 3: VGS (OFF) classification Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Plese handle with caution.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
K2467
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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