欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): 2SK2550
元件分類(lèi): JFETs
英文描述: 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16C1B, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 148K
代理商: 2SK2550
2SK2550
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2550
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 24 m (typ.)
High forward transfer admittance
: |Yfs| = 27 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 50 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
50
V
Draingate voltage (RGS = 20 k)
VDGR
50
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
45
A
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
115
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 71 H, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相關(guān)PDF資料
PDF描述
2SK2568 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2598(TO-220FL) 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2601 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2610 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2617ALS 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2550_06 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2551 功能描述:MOSFET N-CH 50V 50A TO-3PN RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2551_06 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2551_09 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2552 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SK2552 Data Sheet | Data Sheet[01/2002]
主站蜘蛛池模板: 兰西县| 扎赉特旗| 定陶县| 崇信县| 黑山县| 枞阳县| 喜德县| 秭归县| 六安市| 长垣县| 博兴县| 宁乡县| 大荔县| 新竹市| 姜堰市| 琼中| 静海县| 楚雄市| 秭归县| 海晏县| 图木舒克市| 衡山县| 区。| 甘孜县| 霍山县| 九寨沟县| 桐乡市| 南溪县| 通许县| 焉耆| 青田县| 余庆县| 宣武区| 公安县| 东兴市| 旬阳县| 庄浪县| 吉木萨尔县| 资源县| 濮阳县| 兴业县|