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參數資料
型號: 2SK2552C
廠商: NEC Corp.
英文描述: JUNCTION FIELD EFFECT TRANSISTOR
中文描述: 結型場效應晶體管
文件頁數: 1/5頁
文件大小: 133K
代理商: 2SK2552C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
JUNCTION FIELD EFFECT TRANSISTOR
2SK2552C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D18893EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK2552C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK2552C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
Low noise:
108.5 dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
Ω
)
Containing a diode and high resistivity, short stability time is
achieved during power-on.
Small package: SC-75 (USM)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2552C
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
=
1.0 V)
V
DSX
20
V
Gate to Drain Voltage
V
GDO
20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°
C
°
C
Storage Temperature
T
stg
55 to
+
125
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.6
TYP.
0 to 0.1
1
0
0.5
TYP.
1.0 TYP.
1.6 ±0.1
0.5
TYP.
0.75 ±0.05
0.3
+0.1
–0
0.15
+0.1
0.2
+0.1
–0
1
2
3
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
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相關代理商/技術參數
參數描述
2SK2553 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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