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參數資料
| 型號： | 2SK2580 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 40A條（丁）|的SOT - 186 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK2580 |
2SK2553
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note 2
60
V
Gate to source voltage
±
20
V
Drain current
50
A
Drain peak current
Note 1
200
A
Body to drain diode reverse drain current
50
A
Avalanche current
Note 3
45
A
Avalanche energy
Note 3
174
mJ
Channel dissipation
75
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2581 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | SOT-186 |
| 2SK2582 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2588 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | SOT-186 |
| 2SK2509 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-221VAR |
| 2SK2513 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2581 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | SOT-186 |
| 2SK2582 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-220AB |
| 2SK2586 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2586(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine |
| 2SK2586-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,60A,7ohm,TO-3P |
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