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參數資料
型號: 2SK2591
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應晶體管(不適用溝道MOSFET的)
文件頁數: 4/4頁
文件大小: 22K
代理商: 2SK2591
2SK2591
4
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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相關代理商/技術參數
參數描述
2SK2592 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-262AA
2SK2593 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET
2SK2593GQL 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 類別:分離式半導體產品 >> JFET(結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關)@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS(開):200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW
2SK2593JQL 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 類別:分離式半導體產品 >> JFET(結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關)@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS(開):200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW
2SK2593P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 1MA I(DSS) | SC-75A
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