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參數資料
| 型號： | 2SK2593Q |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 55V的五（巴西）直| 2MA我（直）|律師- 75A條 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK2593Q |
2SK2553
4
100
75
50
25
0
C
50
100
150
200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
500
200
100
20
50
10
2
1
5
0.5
0.1
0.3
1
3
10
30
100
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
10μs
100μs
1ms
DCOpeaion(T =25C
3
1
0.3
0.1
0.03
0.01
10 μ
100 μ
1 m
10 m
Pulse Width PW (S)
N
100 m
1
10
s
γ
DM
P
PW
T
D =T
ch – c = 1.67 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Normalized Transient Thermal Impedance vs. Pulse Width
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2593R | TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 5MA I(DSS) | SC-75A |
| 2SK2593S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK259H | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5A I(D) | TO-3 |
| 2SK260H | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2833 | TERMINAL |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2593R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 5MA I(DSS) | SC-75A |
| 2SK2593S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 10MA I(DSS) | SC-75A |
| 2SK2595 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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