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參數(shù)資料
型號(hào): 2SK2593S
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場效應(yīng)| N溝道| 55V的五(巴西)直| 10mA的我(直)|律師- 75A條
文件頁數(shù): 3/9頁
文件大?。?/td> 48K
代理商: 2SK2593S
2SK2553
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A
V
GS
= 10 V
Note 1
I
D
= 25 A
V
GS
= 4 V
Note 1
I
D
= 25 A
V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
10
V
GS(off)
R
DS(on)
1.0
2.0
V
Static drain to source on state
resistance
7
10
m
10
16
m
Forward transfer admittance
|y
fs
|
35
55
S
Input capacitance
Ciss
3550
pF
Output capacitance
Coss
1760
pF
Reverse transfer capacitance
Crss
500
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
35
ns
I
D
= 25 A
V
GS
= 10 V
R
L
= 1.2
Rise time
230
ns
Turn-off delay time
470
ns
Fall time
360
ns
Body to drain diode forward
voltage
0.85
V
I
F
= 50 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
135
ns
I
F
= 50 A, V
= 0
di
F
/ dt = 50 A /
μ
s
See characteristic curves of 2SK2529.
相關(guān)PDF資料
PDF描述
2SK259H TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5A I(D) | TO-3
2SK260H Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK2833 TERMINAL
2SK2833-R Power MOSFET
2SK3151 0.025 ohm, POWER, FET
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