欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SK2647
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: N-channel MOS-FET
中文描述: N溝道場效應管
文件頁數: 1/2頁
文件大小: 367K
代理商: 2SK2647
2SK2647-01MR
FAP-IIS Series
N-channel MOS-FET
4
800V
4A
40W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
C
=25°C),
unless otherwise specified
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
800
4
16
±30
4
109
40
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=800V
V
GS
=0V
V
GS
=±30V
I
D
=2A
I
D
=2A
V
DS
=25V
Min.
800
3,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
4,0
10
0,2
10
3,19
4,5
500
1,0
100
4,0
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
2
450
75
40
20
40
50
25
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=4A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
3
1,0
450
3,0
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
3,125
Unit
°C/W
°C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
相關PDF資料
PDF描述
2SK2648 N-channel MOS-FET
2SK2648-01 N-channel MOS-FET
2SK2649 CTV 4C 4#16 PIN RECP
2SK2649-01R N-channel MOS-FET
2SK2651 N-channel MOS-FET
相關代理商/技術參數
參數描述
2SK2647-01MRSC 制造商:Fuji Electric 功能描述:
2SK2648-01SC 制造商:Fuji Electric 功能描述:
2SK2649-01RSC 制造商:Fuji Electric 功能描述:
2SK2651 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK2651-01MR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
主站蜘蛛池模板: 油尖旺区| 米易县| 祥云县| 康平县| 芜湖县| 桓台县| 金乡县| 凤山市| 昭苏县| 衢州市| 修水县| 康乐县| 马龙县| 陵水| 读书| 商城县| 池州市| 东城区| 栾川县| 天峻县| 农安县| 西乌珠穆沁旗| 微博| 拉萨市| 揭西县| 松滋市| 法库县| 汨罗市| 贵德县| 肃宁县| 东山县| 荥阳市| 新余市| 株洲市| 华宁县| 漳浦县| 崇文区| 庆元县| 湘西| 齐齐哈尔市| 江安县|