欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SK2652-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-channel MOS-FET
中文描述: 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: SC-65, TO-3P, 3 PIN
文件頁數: 1/2頁
文件大小: 374K
代理商: 2SK2652-01
2SK2652-01
FAP-IIS Series
N-channel MOS-FET
2,5
900V
6A
125W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
C
=25°C),
unless otherwise specified
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
900
6
24
±30
6
277
125
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=900V
V
GS
=0V
V
GS
=±30V
I
D
=3A
I
D
=3A
V
DS
=25V
Min.
900
3,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
4,0
10
0,2
10
1,87
4,5
500
1,0
100
2,5
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
4
900
130
70
25
80
70
40
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=6A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
6
1,0
850
8,5
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,0
Unit
°C/W
°C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
相關PDF資料
PDF描述
2SK2653-01R N-channel MOS-FET
2SK2654-01 N-channel MOS-FET
2SK2654 N-channel MOS-FET
2SK2655 N-channel MOS-FET
2SK2655-01R N-channel MOS-FET
相關代理商/技術參數
參數描述
2SK2652-01SC 制造商:Fuji Electric 功能描述:
2SK2653-01RSC 制造商:Fuji Electric 功能描述:
2SK2654-01SC 制造商:Fuji Electric 功能描述:
2SK2655 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK2655-01R 制造商: 功能描述: 制造商:undefined 功能描述:
主站蜘蛛池模板: 武山县| 麻阳| 布拖县| 新化县| 喀喇沁旗| 绥化市| 闵行区| 青阳县| 融水| 太康县| 新竹县| 乌恰县| 邓州市| 兰坪| 永新县| 万州区| 集贤县| 孝感市| 察隅县| 集安市| 无为县| 毕节市| 八宿县| 鄂伦春自治旗| 龙山县| 韶山市| 遂平县| 义马市| 漳州市| 上饶市| 微博| 大厂| 曲阳县| 兴海县| 醴陵市| 阿克陶县| 修武县| 萨嘎县| 呼伦贝尔市| 中宁县| 唐河县|