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參數資料
| 型號： | 2SK2695-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 5 A, 700 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 286K |
| 代理商： | 2SK2695-01 |
2SK2695-01
FAP-IIIB Series
N-channel MOS-FET
700V
1,85
±5A
60W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
700
±5
±20
±30
222.8
60
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=700V
V
GS
=0V
V
GS
=±30V
I
D
=2,5A
I
D
=2,5A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
700
2,5
3,0
10
0,2
10
1,4
3,5
500
1,0
100
1,85
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
2
4
820
120
65
20
45
80
45
1230
180
100
V
CC
=600V
V
GS
=10V
I
D
=5A
30
70
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
120
70
R
GS
=10
T
ch
=25°C
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2 X I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI/dt=100A/μs T
ch
=25°C
5
0,93
610
5,5
1,4
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
2,08
75,0
Unit
°C/W
°C/W
R
th(ch-c)
R
th(ch-a)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2698 | 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2698(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
| 2SK2698(F,T) | 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2698(T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 15A TO-3PN |
| 2SK2698 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
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