- 您現在的位置：買賣IC網 > PDF目錄33492 > 2SK2700 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK2700 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-67, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 388K |
| 代理商： | 2SK2700 |
2SK2700
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)
2SK2700
Chopper Regulator, DC–DC Converter and Motor Drive
Applications
Low drain–source ON resistance
: RDS (ON) = 3.7 (typ.)
High forward transfer admittance
: |Yfs| = 2.6 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
900
V
Drain–gate voltage (RGS = 20 k)
VDGR
900
V
Gate–source voltage
VGSS
±30
V
DC
(Note 1)
ID
3
A
Drain current
Pulse (Note 1)
IDP
9
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
295
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, RG = 25 , IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2718 | 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2725 | 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2725 | 1.6 ohm, POWER, FET |
| 2SK2731T146 | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2735(L) | 0.05 ohm, POWER, FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2700(Q,T) | 功能描述:MOSFET N-ch 900V 3A 3.7 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2701A | 制造商:Sanken Electric Co Ltd 功能描述:Trans MOSFET N-CH 450V 28A 3-Pin(3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 450V TO-220F |
| 2SK2713 | 功能描述:MOSFET N-CH 450V 5A TO-220FN RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2715TL | 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2717 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 5A 3PIN TO-220(NIS) - Rail/Tube |
發布緊急采購，3分鐘左右您將得到回復。