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參數(shù)資料
| 型號： | 2SK2737 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK2737 |
2SK2737
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
30
V
Gate to source voltage
±
20
V
Drain current
45
A
Drain peak current
Note1
180
A
Body-drain diode reverse drain current
45
A
Channel dissipation
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
30
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
Note3
I
D
= 20A, V
GS
= 10V
Note3
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
±
20
—
—
V
Gate to source leak current
—
—
±
10
μ
A
μ
A
Zero gate voltage drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
resistance
—
10
14
m
Static drain to source on state
resistance
R
DS(on)
—
15
25
m
I
D
= 20A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
Ciss
20
30
—
S
I
D
= 20A, V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
Input capacitance
—
1570
—
pF
Output capacitance
Coss
—
1100
—
pF
Reverse transfer capacitance
Crss
—
410
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
32
—
ns
V
GS
= 10V, I
D
= 25A
R
L
= 0.4
Rise time
—
300
—
ns
Turn-off delay time
—
180
—
ns
Fall time
—
200
—
ns
Body–drain diode forward voltage
—
1.0
—
V
I
F
= 45A, V
GS
= 0
I
= 45A, V
= 0
diF/ dt = 50A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
—
75
—
ns
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