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參數(shù)資料
| 型號(hào)： | 2SK2789(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 428K |
| 代理商： | 2SK2789(2-10S1B) |
2SK2789
2002-06-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2789
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON resistance
: RDS (ON) = 66 m (typ.)
High forward transfer admittance
: |Yfs| = 16 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 100 V)
Enhancementmode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
27
A
Drain current
Pulse (Note 1)
IDP
108
A
Drain power dissipation (Tc = 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
193
mJ
Avalanche current
IAR
27
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.08
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 H, IAR = 27 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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