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參數(shù)資料
| 型號(hào)： | 2SK2795 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅?通道場效應(yīng)晶體管超高頻功率放大器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 40K |
| 代理商： | 2SK2795 |
2SK2795
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
10
V
Gate to source voltage
VGSS
±
6
V
Drain current
ID
0.17
A
Drain peak current
ID(pulse)*1
0.3
A
Channel dissipation
Pch*2
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10ms, duty cycle
≤
50 %
2. Value at Tc = 25
°
C
Tstg
–45 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltege drain
current
IDSS
—
—
10
μ
A
VDS = 10 V, VGS = 0
Gate to source leak current
IGSS
—
—
±
5.0
μ
A
VGS =
±
6V, VDS = 0
Gate to source cutoff voltage VGS(off)
0.3
—
1.0
V
ID = 1mA, VDS = 5V
Input capacitance
Ciss
—
9.5
—
pF
VGS = 2V, VDS = 0
f = 1MHz
Output capacitance
Coss
—
4.5
—
pF
VDS = 5, VGS = o
f = 1MHz
Output Power
Pout
24
—
—
dBm
VDS = 4.7V
f =836.5MHz
Pin = 13dBm
Drain Rational
η
D
40
—
—
%
VDS = 4.7V
f =836.5MHz
Pin = 13dBm
Note:
3. Marking is “ DX “.
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