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參數資料
| 型號： | 2SK2832-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 36K |
| 代理商： | 2SK2832-01R |
7
1 RDS (on): VGS=10V,
2 PD: TC=25
°C
VDSS
ID
ID (pulse)
RDS (on)
PD
2
VGSS
VGS (th)
Device type
Max.
1
Typ.
Package
Net mass
Volts
Amps.
Ohms (
)
Watts
Volts
Grams
30
10
40
0.06
20
±16
1.5
K-pack
0.6
30
10
40
0.06
35
±16
1.5
T-pack
1.6
30
50
200
0.013
80
±16
1.5
T-pack
1.6
60
8
32
0.22
20
±20
1.5
TO-220F
2.0
60
10
40
0.1
20
±20
1.5
K-pack
0.6
60
13
52
0.12
30
±20
1.5
TO-220F
2.0
60
45
180
0.022
50
±20
1.5
TO-220F
2.0
60
50
200
0.02
80
±20
1.5
T-pack
1.6
60
50
200
0.02
80
±20
1.5
TO-220AB
2.0
150
20
80
0.08
50
±20
1.5
TO-220F
2.0
150
20
80
0.08
80
±20
1.5
T-pack
1.6
2SK2248-01L, S
2SK2249-01L, S
2SK2516-01L, S
2SK1083-MR
2SK2018-01L, S
2SK1096-MR
2SK1946-01MR
2SK2517-01L, S
2SK2832-01R
2SK2098-01MR
2SK2226-01L, S
VDSS
ID
ID (pulse)
RDS (on)
PD
2
VGSS
VGS (th)
Device type
Max.
1
Typ.
Package
Net mass
Volts
Amps.
Ohms (
)
Watts
Volts
Grams
-30
-5
-20
0.4
15
±16
-1.5
K-pack
0.6
-60
-5
-20
0.3
20
±20
-1.5
K-pack
0.6
-60
-7
-28
0.2
20
±20
-1.5
K-pack
0.6
-60
-7
-28
0.2
20
±20
-1.5
T-pack
1.6
-60
-25
-100
0.06
50
±20
-1.5
TO-220AB
2.0
-60
-25
-100
0.06
50
±20
-1.5
T-pack
1.6
-60
-25
-100
0.06
40
±20
-1.5
TO-220F
2.0
2SJ472-01L, S
2SJ314-01L, S
2SJ473-01L, S
2SJ474-01L, S
2SJ475-01
2SJ476-01L, S
2SJ477-01MR
1 RDS (on): VGS=10V,
2 PD: TC=25
°C
VDSS
ID
ID (pulse)
RDS (on)
PD
2
VGSS
VGS (th)
Device type
Max.
1
Typ.
Package
Net mass
Volts
Amps.
Ohms (
)
Watts
Volts
Grams
60
20
80
0.07
35
±20
1.5
TO-220F
2.0
60
40
160
0.03
40
±20
1.5
TO-220F
2.0
60
40
160
0.03
100
±20
1.5
TO-3P
5.5
60
40
160
0.03
80
±20
1.5
TO-3PF
6.0
60
50
200
0.017
125
±20
1.5
TO-3P
5.5
60
50
200
0.017
80
±20
1.5
TO-3PF
6.0
2SK1822-01MR
2SK2259-01MR
2SK2165-01
2SK2166-01R
2SK1969-01
2SK1823-01R
1 RDS (on): VGS=10V,
2 PD: TC=25
°C
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| 2SK2837 | 功能描述:MOSFET N-CH 500V 20A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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| 2SK2837(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 20A TO-3PN |
| 2SK2838(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220 |
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