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參數資料
| 型號： | 2SK2874-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 240K |
| 代理商： | 2SK2874-01S |
2SK2874-01L,S
FAP-IIS Series
N-channel MOS-FET
1,5
500V
±6A
50W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
≤
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
500
±6
±24
±35
6
259.1
50
150
-55 ~ +150
L=13.2mH,Vcc=50V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=500V
V
GS
=0V
V
GS
=±35V
I
D
=3A
I
D
=3A
Min.
500
3,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=6A
V
GS
=10V
R
GS
=10
T
ch
=25°C
4,0
10
0,2
10
1,25
4,5
500
1,0
100
1,5
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
2
4
540
100
45
13
40
30
25
810
150
70
20
60
45
40
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 13,2mH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
6
1,0
450
3,2
1,50
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-c)
R
th(ch-a)
Test conditions
channel to case
channel to air
Min.
Typ.
Max.
2,5
125,0
Unit
°C/W
°C/W
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相關代理商/技術參數 |
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