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參數資料
| 型號： | 2SK2890-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F15, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 219K |
| 代理商： | 2SK2890-01 |
2SK2890-01
FAP-IIIB Series
N-channel MOS-FET
30V
0,0105
±50A
50W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
30
±50
±200
±16
1441.5
50
150
-55 ~ +150
L=0.769mH,Vcc=12V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=30V
V
GS
=0V
V
GS
=±16V
I
D
=50A
I
D
=50A
I
D
=50A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
m
m
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
30
1,0
1,5
10
0,2
10
8,0
5,3
70
3900
2000
850
17
70
250
180
2,0
500
1,0
100
10,5
6,8
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
35
5850
3000
1280
V
CC
=15V
V
GS
=10V
I
D
=100A
30
110
380
270
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
R
GS
=10
T
ch
=25°C
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-dI/dt=100A/μs T
ch
=25°C
50
1,0
65
0,12
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
Unit
°C/W
°C/W
R
th(ch-c)
R
th(ch-a)
2,5
62,5
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