欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SK2899-01R
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-channel MOS-FET
中文描述: 100 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PF, 3 PIN
文件頁數: 1/3頁
文件大小: 256K
代理商: 2SK2899-01R
2SK2899-01R
FAP-IIIB Series
N-channel MOS-FET
60V
6,5m
±100A
125W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
60
±100
±400
±20
1268.3
125
150
-55 ~ +150
L=0.169mH,Vcc=24V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=60V
V
GS
=0V
V
GS
=±20V
I
D
=50A
I
D
=50A
I
D
=50A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
m
m
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
60
1,0
1,5
10
0,2
10
7,0
5,0
80
2,0
500
1,0
100
11,0
6,5
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
40
6700
2100
570
10050
3150
860
V
CC
=30V
V
GS
=10V
I
D
=100A
20
30
160
410
330
300
620
500
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
R
GS
=10
T
ch
=25°C
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=100A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-dI/dt=100A/μs T
ch
=25°C
100
1,0
85
0,21
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
Unit
°C/W
°C/W
R
th(ch-c)
R
th(ch-a)
1,0
30,0
相關PDF資料
PDF描述
2SK2900 N CHANNEL MOSFET
2SK2900-01 N CHANNEL MOSFET
2SK2901-01L N-CHANNEL SILICON POWER MOS-FET
2SK2901-01S N-CHANNEL SILICON POWER MOS-FET
2SK2902 N-CHANNEL SILICON POWER MOS-FET
相關代理商/技術參數
參數描述
2SK2899-01RSC 制造商:Fuji Electric 功能描述:
2SK2900-01SC 制造商:Fuji Electric 功能描述:
2SK2902-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK2903 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK2903-01MRSC-P 制造商:Fuji Electric 功能描述:
主站蜘蛛池模板: 通海县| 溧水县| 勃利县| 屯留县| 贡嘎县| 大同县| 鹤壁市| 许昌市| 恩施市| 乐安县| 辉县市| 承德县| 田林县| 嘉禾县| 太保市| 老河口市| 阿克陶县| 嫩江县| 澄迈县| 荃湾区| 望都县| 泌阳县| 永川市| 宁城县| 盱眙县| 慈利县| 汶上县| 文登市| 辉县市| 柘荣县| 霍山县| 吕梁市| 呼和浩特市| 厦门市| 平顺县| 洪湖市| 调兵山市| 苗栗市| 什邡市| 榆树市| 临洮县|