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參數(shù)資料

2SK2922

Silicon N Channel MOS FET

UHF Power Amplifier

ADE-208-675A (Z)

2nd. Edition

Mar. 2001

Features

High power output, High gain, High efficiency

PG = 8.0dB, Pout = 31dBm,

ηD = 57 %min. (f = 836.5MHz)

Compact package capable of surface mounting

Outline

UPAK

1. Gate

2. Source

3. Drain

4. Source

This Device is sensitive to Electro Static Discharge.

An Adequate handling procedure is requested.

相關(guān)PDF資料	PDF描述
2SK2926(S)	0.11 ohm, POWER, FET
2SK2926L-E	15 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2927	0.15 ohm, POWER, FET, TO-220AB
2SK2927	10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2930-E	35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
2SK2925L-E	制造商:Renesas Electronics Corporation 功能描述:
2SK2925-S(TR-E)	制造商:Renesas Electronics Corporation 功能描述:
2SK2925STR-E	制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape
2SK2926	制造商:Renesas Electronics Corporation 功能描述:
2SK2926L-E	制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,15A,42m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2)

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