- 您現在的位置：買賣IC網 > PDF目錄33493 > 2SK2949(2-10S2B) 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK2949(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220SM, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 442K |
| 代理商： | 2SK2949(2-10S2B) |
2SK2949
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2949
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.4 (typ.)
High forward transfer admittance
: |Yfs| = 8.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 400 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
400
V
Draingate voltage (RGS = 20 k)
VDGR
400
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation (Tc = 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
360
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.56
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 ,
IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2955-E | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2955 | 0.025 ohm, POWER, FET |
| 2SK2956-E | 50 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2957(S) | 50 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2957L | 50 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2951-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH200V1ASOT89 |
| 2SK2952 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 400V 8.5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2952(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 400V 8.5A 3-Pin (3+Tab) TO-220(NIS) Bulk |
| 2SK2952(Q,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2952Q | 制造商:Toshiba America Electronic Components 功能描述:"2SK2952 (Q) POWER MOSFET, BULK" |
發布緊急采購，3分鐘左右您將得到回復。