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參數資料
| 型號： | 2SK2953 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16F1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 430K |
| 代理商： | 2SK2953 |
2SK2953
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2953
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.31 (typ.)
High forward transfer admittance
: |Yfs| = 15 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
600
V
Draingate voltage (RGS = 20 k)
VDGR
600
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
15
Drain current
Pulse (Note 1)
IDP
60
A
Drain power dissipation (Tc = 25°C)
PD
90
W
Single pulse avalanche energy
(Note 2)
EAS
1026
mJ
Avalanche current
IAR
15
A
Repetitive avalanche energy (Note 3)
EAR
9
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.39
°C / W
Thermal resistance, channel to ambient
Rth (cha)
41.6
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.98 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2953(F) | 功能描述:MOSFET N-Ch 600V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2955-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-3P Tube |
| 2SK2956-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220CFM Box Cut Tape |
| 2SK2959-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB Box |
| 2SK296 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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