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參數資料
| 型號： | 2SK2975 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | RF POWER MOS FET(VHF/UHF power amplifiers) |
| 中文描述： | 射頻功率MOS FET（甚高頻/超高頻功率放大器） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 29K |
| 代理商： | 2SK2975 |
2SK2975
MITSUBISHI RF POWER MOS FET
Nov. ′97
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
High power gain:Gpe
≥
8.4dB
@V
DD
=9.6V,f=450MHz,Pin=30dBm
High efficiency:55% typ.
Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
Typ
Max
10
1
1.7
Min
Limits
Parameter
Test conditions
Symbol
V
DSS
V
GSS
P
ch
T
j
T
stg
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14
×
2.8
×
2mm)
Parameter
Ratings
30
±20
10
175
Unit
V
V
W
C
C
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
-40 to +110
ABSOLUTE MAXIMUM RATINGS
(T
C
=25C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(T
C
=25C, unless otherwise noted)
Symbol
Unit
I
DSS
I
GSS
V
TH
C
iss
C
oss
P
out
h
D
Threshold voltage
Note: Above parameters,ratings,limits and conditions are subject to change.
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
55
μA
μA
V
pF
pF
W
%
1.0
V
DS
=9.6V, P
in
=1W,f=450MHz
7
50
8
80
45
Conditions
Tc=25C (Note2)
OUTLINE DRAWING
Dimensions in mm
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
2
3
3.50
1
t=1.2MAX
(BOTTOM)
(TOP)
4.9
INDEX MARK
2.0
LOT No.
TYPE No.
INDEX
MARK
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