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參數資料
| 型號： | 2SK2981-Z |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 59K |
| 代理商： | 2SK2981-Z |
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D12355EJ1V0DS00 (1st edition)
Date Published
December 1998 NS CP(K)
Printed in Japan
PACKAGE DRAWING (Unit : mm)
TO-251(MP-3)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
1.3 MAX.
1.6
±0.2
12 3
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3 2.3
0.75
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
4.3
MAX.
1.3 MAX.
2.3 2.3
12
3
4
5.5
±0.2
10.0
MAX.
1.5
+0.2
–0.1
1.5
+0.2
–0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0 MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-resistance
RDS(on)1 = 27 m
(MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 m
(MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 m
(MAX.) (VGS = 4 V, ID = 10 A)
Low Ciss : Ciss = 860 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (Pulse)
Note
ID(pulse)
±80
A
Total Power Dissipation (Tc = 25 °C)
PT
20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Note PW
≤ 10
s, Duty cycle ≤ 1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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