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參數資料
| 型號： | 2SK2985 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 424K |
| 代理商： | 2SK2985 |
2SK2985
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UMOSII)
2SK2985
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 4.5 m (typ.)
High forward transfer admittance
: |Yfs| = 70 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
180
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
701
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 H, IAR = 45 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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