- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33493 > 2SK2993(2-10S1B) 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2993(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 465K |
| 代理商： | 2SK2993(2-10S1B) |
2SK2993
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2993
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 82 m (typ.)
High forward transfer admittance
: |Yfs| = 20 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 250 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
20
Drain current
Pulse (Note 1)
IDP
60
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
423
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2996 | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2998 | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK3012 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3013 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3017 | 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2993-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2993TE24L | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 20A 3PIN TO-220FL/SM - Tape and Reel |
| 2SK2995 | 功能描述:MOSFET N-CH 250V 30A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2995(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N)IS 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P |
| 2SK2996 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:B1DEGR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。