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參數資料
型號: 2SK3019TL
元件分類: 小信號晶體管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: EMT3, 3 PIN
文件頁數: 1/4頁
文件大小: 70K
代理商: 2SK3019TL
2SK3019
Transistor
Rev.C
1/3
2.5V Drive Nch MOS FET
2SK3019
Structure
Silicon N-channel
MOSFET
Applications
Interfacing, switching (30V, 100mA)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
(1)Source
(2)Gate
(3)Drain
EMT3
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
Abbreviated symbol : KN
Packaging specifications
TL
3000
2SK3019
Type
Package
Code
Basic ordering unit
(pieces)
Taping
Absolute maximum ratings (Ta=25
°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
PD2
Tch
30
V
mA
mW
°C
±20
±100
ID
IDP1
Continuous
Pulsed
mA
±400
150
Tstg
°C
55 to +150
Symbol
Limits
Unit
1 Pw≤10s, Duty cycle≤1%
2 With each pin mounted on the recommended lands.
Equivalent circuit
Drain
Source
Gate
Gate
Protection
Diode
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Thermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol
Limits
Unit
Channel to ambient
With each pin mounted on the recommended lands.
833
相關PDF資料
PDF描述
2SK301P 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK0301S 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK0301P 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK301S 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK302 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236
相關代理商/技術參數
參數描述
2SK3019-TP 功能描述:N-CHANNEL MOSFET, SOT-523 PACKAG 制造商:micro commercial co 系列:- 包裝:剪切帶(CT) 零件狀態:在售 FET 類型:N 溝道 技術:MOSFET(金屬氧化物) 漏源電壓(Vdss):30V 電流 - 連續漏極(Id)(25°C 時):100mA(Ta) 驅動電壓(最大 Rds On,最小 Rds On):4V,10V 不同 Id 時的 Vgs(th)(最大值):1.5V @ 100μA Vgs(最大值):±20V 不同 Vds 時的輸入電容(Ciss)(最大值):13pF @ 5V FET 功能:- 功率耗散(最大值):150mW(Ta) 不同?Id,Vgs 時的?Rds On(最大值):8 歐姆 @ 10mA,4V 工作溫度:-55°C ~ 150°C(TA) 安裝類型:表面貼裝 供應商器件封裝:SOT-523 封裝/外殼:SOT-523 標準包裝:1
2SK3019TT1 制造商:WILLAS 制造商全稱:WILLAS 功能描述:SOT-523 Plastic-Enc apsulate MOSFETS
2SK301-QR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK301QRS 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK301-QRS 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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