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參數(shù)資料
| 型號(hào)： | 2SK3022(TENTATIVE) |
| 英文描述： | 2SK3022 (Tentative) - N-Channel Power F-MOS FET |
| 中文描述： | 2SK3022（暫定） - N溝道功率的F -場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 54K |
| 代理商： | 2SK3022(TENTATIVE) |
2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
Low on-resistance
R
DS(on) = 4.5 m typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
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| 2SK3026(TENTATIVE) | 2SK3026 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 2SK3027(TENTATIVE) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK302GR | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3023 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3023(TENTATIVE) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SK3023 (Tentative) - N-Channel Power F-MOS FET |
| 2SK3024 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel Power F-MOSFET |
| 2SK3024(TENTATIVE) | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3025 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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