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參數(shù)資料
| 型號(hào)： | 2SK3022 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, U-G1, SC-63, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 24K |
| 代理商： | 2SK3022 |
1
Power F-MOS FETs
2SK3022 (Tentative)
Silicon N-Channel Power F-MOS FET
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
Low ON-resistance
G
No secondary breakdown
G
Low-voltage drive
G
High electrostatic breakdown voltage
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
unit: mm
1: Gate
2: Drain
3: Source
U Type Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 40V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
GS
= 4V, I
D
= 3A
V
DS
= 10V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 30V, I
D
= 3A
V
GS
= 10V, R
L
= 10
min
60
1
2
typ
90
130
4
220
90
50
15
30
170
550
max
10
±10
2.5
135
200
1.3
12.5
125
Unit
μ
A
μ
A
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
60
±20
±5
±10
1.25
10
1
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 0.1mH, I
L
= 5A, 1 pulse
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
1
2
3
0.93±0.1
2
0
1
7
1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
Internal Connection
G
D
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3022(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3022 (Tentative) - N-Channel Power F-MOS FET |
| 2SK302200L | 功能描述:MOSFET N-CH 60V 5A UG-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3023 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3023(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3023 (Tentative) - N-Channel Power F-MOS FET |
| 2SK3024 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel Power F-MOSFET |
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