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參數(shù)資料
| 型號(hào)： | 2SK3026 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 40 A, 60 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220E, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 24K |
| 代理商： | 2SK3026 |
1
Power F-MOS FETs
2SK3026 (Tentative)
Silicon N-Channel Power F-MOS FET
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
Low ON-resistance
G
No secondary breakdown
G
Low-voltage drive
G
High electrostatic breakdown voltage
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
unit: mm
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 50V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
V
GS
= 4V, I
D
= 20A
V
DS
= 10V, I
D
= 20A
I
DR
= 20A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 30V, I
D
= 20A
V
GS
= 10V, R
L
= 1.5
min
60
1
19
typ
12
16
37
2350
810
450
15
55
180
600
max
10
±10
2.5
18
24
1.2
2.5
62.5
Unit
μ
A
μ
A
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
60
±20
±40
±80
80
50
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 0.1mH, I
L
= 40A, 1 pulse
Internal Connection
1: Gate
2: Drain
3: Source
TO-220E Package (a)
9.9±0.3
2
3
1
4.6±0.2
2.9±0.2
2.6±0.1
2.54±0.2
5.08±0.4
0.75±0.1
1.2±0.15
1.45±0.15
1
1
+
–
φ
3.2±0.1
3
8
4
S
0.7±0.1
7
G
D
S
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| 2SK3027 | Silicon N-Channel Power F-MOS FET |
| 2SK3028 | Silicon N-Channel Power F-MOS FET |
| 2SK3028(TENTATIVE) | Silicon N-Channel Power F-MOS FET |
| 2SK3029 | Silicon N-Channel Power F-MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3026(TENTATIVE) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SK3026 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 2SK3027 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3027(TENTATIVE) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SK3027 (Tentative) - Silicon N-Channel Power F-MOS FET |
| 2SK3028 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3028(TENTATIVE) | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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